Multidimensional Nanoscale device modeling: the Finite Element Method applied to the Non-Equilibrium Green’s Function formalism
نویسندگان
چکیده
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green’s Functions (NEGF) formalism and the variational form of the problem is solved using the finite element method (FEM). In this approach, the derivation of the boundary conditions at the interfaces of the device with the reservoirs, is used to calculate the self-energy functions. The FEM allows us to consider very complex geometries and nonuniform mesh, while the NEGF is a powerful formalism which will allow to include scattering in the problem. The simulations are performed by solving self-consistently the NEGF (equivalent to the open Schrödinger equation in ballistic regime) for the transport problem and the Poisson equation to account for the space charge effects.
منابع مشابه
Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...
متن کاملNanoscale device modeling: the Green’s function method
The non-equilibrium Green’s function (NEGF) formalism provides a sound conceptual basis for the devlopment of atomic-level quantum mechanical simulators that will be needed for nanoscale devices of the future. However, this formalism is based on concepts that are unfamiliar to most device physicists and chemists and as such remains relatively obscure. In this paper we try to achieve two objecti...
متن کاملQuantum modeling of light absorption in graphene based photo-transistors
Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a...
متن کاملBoundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs
Non-equilibrium Green’s function (NEGF) is a general method for modeling non-equilibrium quantum transport in open mesoscopic systems with many body scattering effects. In this paper, we present a unified treatment of quantum device boundaries in the framework of NEGF with both finite difference and finite element discretizations. Boundary treatments for both types of numerical methods, and the...
متن کاملOn the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors
Exceptional electronic and mechanical properties together with nanoscale diameter make carbon nanotubes (CNTs) promising candidates for nanoscale transistors. Semiconducting CNTs can be used as a channel for field-effect transistors (FETs), and metallic CNTs can serve as interconnect wires. In short devices carrier transport through the device is nearly ballistic [1]. The non-equilibrium Green’...
متن کامل